English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR4 |
| 内存大小: | 8Gb (256M x 32) |
| 内存接口: | - |
| 时钟频率: | 1.6 GHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.1V |
| 工作温度: | -40°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 200-WFBGA |
| 供应商设备包: | 200-WFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT28HC64B-90SCRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
IDT71V3557S75PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS61LV5128AL-10TISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
AT29LV010A-12TCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
70V27S25PFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
IDT71V547S100PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT28F008B3VP-9 B TRMicron Technology |
IC FLASH 8MBIT PARALLEL 40TSOP I |
|
MT29F8G08ABABAWP-IT:B TRMicron Technology |
IC FLASH 8GBIT PARALLEL 48TSOP I |
|
QMP29GL512P10TAI010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
IDT71V35761SA200BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AT49BV802AT-70TIRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
W25Q16CLZPIGWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
IDT71V3577SA80BQGRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
