English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | StrataFlash™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 128Mb (16M x 8, 8M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 75ns |
| 访问时间: | 75 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-TBGA |
| 供应商设备包: | 64-EasyBGA (10x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT29F2G01ABAGDSF-IT:GMicron Technology |
IC FLASH 2GBIT SPI 16SO |
|
MT48LC4M16A2P-7E AIT:JMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
AT49F002T-70PCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32DIP |
|
AT27C256R-45RURoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28SOIC |
|
70V9179L7PFRenesas Electronics America |
IC SRAM 288KBIT PARALLEL 100TQFP |
|
MT46V32M8TG-75 IT:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
CAT28C16AWI-12TSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT PARALLEL 24SOIC |
|
MT46H32M32LFMA-6 IT:B TRMicron Technology |
IC DRAM 1GBIT PARALLEL 168WFBGA |
|
CY7C1513UV18-300BZCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
M25PX32-VMF6EMicron Technology |
IC FLASH 32MBIT SPI 75MHZ 16SO |
|
MT29RZ2B1DZZHGWD-18I.83G TRMicron Technology |
IC FLASH RAM 2GBIT PAR 162VFBGA |
|
MT52L512M32D2PF-093 WT:BMicron Technology |
IC DRAM 16GBIT 1067MHZ 178FBGA |
|
W25Q64JWZEIQWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8WSON |
