类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 36Mb (1M x 36) |
内存接口: | Parallel |
时钟频率: | 167 MHz |
写周期时间 - 字,页: | - |
访问时间: | 4 ns |
电压 - 电源: | 1.42V ~ 1.58V, 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 484-FBGA |
供应商设备包: | 484-FBGA (23x23) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT44K16M36RB-107E IT:B TRMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
M25P20-VMP6Micron Technology |
IC FLASH 2MBIT SPI 50MHZ 8VFQFPN |
|
W25Q64DWSSIGWinbond Electronics Corporation |
IC FLASH 64MBIT SPI 104MHZ 8SOIC |
|
IS42S16100C1-7TI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
CY7C1021B-15VXICypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
W25P16VSSIGWinbond Electronics Corporation |
IC FLASH 16MBIT SPI 50MHZ 8SOIC |
|
AS4C512M8D3LB-10BINAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
IS25LD040-JBLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 4MBIT SPI 100MHZ 8SOIC |
|
MT47H64M8B6-25:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
AT24C08B-PURoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 1MHZ 8DIP |
|
IDT70T631S10DDRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 144TQFP |
|
70V9159L7PF8Renesas Electronics America |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
CY7C027AV-25AXICypress Semiconductor |
IC SRAM 512KBIT PARALLEL 100TQFP |