类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR2 |
内存大小: | 1Gb (128M x 8) |
内存接口: | Parallel |
时钟频率: | 400 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 400 ps |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 60-TFBGA |
供应商设备包: | 60-TWBGA (8x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q64FVTBIPWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 24TFBGA |
|
MT45W1MW16BAFB-856 WTMicron Technology |
IC PSRAM 16MBIT PARALLEL 54VFBGA |
|
LHF00L28Sharp Microelectronics |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
IS43DR16160A-37CBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 84TWBGA |
|
MT46V32M8P-5B IT:KMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
IS61LF102418A-7.5TQISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IDT71V2576YS150PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AS4C32M16SM-7TCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
MTFC8GAMALBH-AAT ES TRMicron Technology |
IC FLASH 64GBIT MMC 153TFBGA |
|
S29GL128S11FFB023Cypress Semiconductor |
IC FLASH 128MB FLASH NOR 64FBGA |
|
IDT71V2559S75PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
THGBMHG7C1LBAILToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 128GBIT EMMC 153WFBGA |
|
W25Q64FWSSIFWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8SOIC |