类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EPROM |
技术: | EPROM - OTP |
内存大小: | 512Kb (64K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 70 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TC) |
安装类型: | Through Hole |
包/箱: | 28-DIP (0.600", 15.24mm) |
供应商设备包: | 28-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NM27C512Q150Sanyo Semiconductor/ON Semiconductor |
IC EPROM 512KBIT PARALLEL 28CDIP |
|
AT29LV040A-15TIRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
AT27LV512A-12JCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
MT48LC16M16A2P-7E:GMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
IS49FL004T-33JCEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
R1RP0416DSB-2PR#D1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
DS1220AD-100Maxim Integrated |
IC NVSRAM 16KBIT PARALLEL 24EDIP |
|
AT93C57-10SC-2.5Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
PZ28F064M29EWHAMicron Technology |
IC FLASH 64MBIT PARALLEL 48BGA |
|
W632GG6KB12I TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96WBGA |
|
M29F800FT55N3F2 TRMicron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
MT46H16M16LFBF-5 IT:H TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60VFBGA |
|
N25Q512A13G12A0F TRMicron Technology |
IC FLASH 512MBIT SPI 24TPBGA |