类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR |
内存大小: | 1Gb (32M x 32) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 5 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 90-VFBGA |
供应商设备包: | 90-VFBGA (10x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS25LQ020B-JDLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 2MBIT SPI/QUAD 8TSSOP |
|
709079L12PFI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
IDT7164L35YG8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
7142SA100J8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
S29GL256S11FAI010Cypress Semiconductor |
IC FLASH 128MB FLASH NOR 64FBGA |
|
AT29C256-12TI-TRoving Networks / Microchip Technology |
IC FLASH 256KBIT PARALLEL 32TSOP |
|
MT48LC8M32B2F5-7 TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
MT28F400B3WG-8 BMicron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP I |
|
IDT71V3557SA85BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
M28W160ECB70ZB6EMicron Technology |
IC FLASH 16MBIT PARALLEL 46TFBGA |
|
AT49LV001T-90JIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
DS1258AB-70#Maxim Integrated |
IC NVSRAM 2MBIT PARALLEL 40EDIP |
|
MT46V64M4BG-6:GTRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |