类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-BSOJ (0.300", 7.62mm Width) |
供应商设备包: | 28-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS62WV6416DBLL-45BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 48MINIBGA |
|
IDT7164L25YIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
MT48LC16M16A2P-6A L:G TRMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
IDT71V65602S100BGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
CY7C0832V-133AXICypress Semiconductor |
IC SRAM 4.5MBIT PARALLEL 120TQFP |
|
AT24C04C-MAPD-TRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8UDFN |
|
MT48H8M32LFF5-10 IT TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
MT46H8M16LFBF-6 AT:KMicron Technology |
IC DRAM 128MBIT PARALLEL 60VFBGA |
|
7006L35PFRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
M24C02-WBN6PSTMicroelectronics |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
S34ML08G201BHB003SkyHigh Memory Limited |
IC FLASH 8G PARALLEL |
|
M29F200BB50N3STMicroelectronics |
IC FLASH 2MBIT PARALLEL 48TSOP |
|
AT49BV642DT-70TURoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |