类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 1.125Mb (32K x 36) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 12ns |
访问时间: | 12 ns |
电压 - 电源: | 3.15V ~ 3.45V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 208-BFQFP |
供应商设备包: | 208-PQFP (28x28) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1361C-100BGCTCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
MT53D384M32D2DS-046 WT ES:EMicron Technology |
IC DRAM 12GBIT 2133MHZ 200WFBGA |
|
IDT71V416YL10YRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
IDT71V65603S100PF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
M24C08-RDS6GSTMicroelectronics |
IC EEPROM 8KBIT I2C 400KHZ 8MSOP |
|
IS42S32200C1-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
N25Q064A13ESEC0GMicron Technology |
IC FLASH 64MBIT SPI 108MHZ 8SO W |
|
MT28EW256ABA1HPC-1SITMicron Technology |
IC FLASH 256MBIT PARALLEL 64LBGA |
|
MT29F4G08ABAEAWP:EMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
DS1250ABP-70Maxim Integrated |
IC NVSRAM 4MBIT PAR 34PWRCAP |
|
IS46DR81280C-3DBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
IDT71P74604S200BQG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
IDT71V424L15YRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |