English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 120 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LCC (J-Lead) |
| 供应商设备包: | 32-PLCC (11.43x13.97) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS61DDB21M36A-250M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
MT46V32M4P-5B:D TRMicron Technology |
IC DRAM 128MBIT PARALLEL 66TSOP |
|
70V35S20PF8Renesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
S29GL128S11FFA023Cypress Semiconductor |
IC FLASH 128MB FLASH NOR 64FBGA |
|
S29AS016J70BFA042Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48FBGA |
|
MT47H32M16BT-37E:A TRMicron Technology |
IC DRAM 512MBIT PARALLEL 92FBGA |
|
IDT71024S20Y8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
DS28DG02E-3C+TMaxim Integrated |
IC EEPROM 2KBIT SPI 2MHZ 28TSSOP |
|
DS1230WP-150Maxim Integrated |
IC NVSRAM 256KBIT PAR 34PWRCAP |
|
IS25LD020-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 2MBIT SPI 100MHZ 8WSON |
|
7024L15JRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
IDT71256SA25TPIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28DIP |
|
IDT70T3319S133DDIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 144TQFP |
