English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 128Mb (4M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 90-TFBGA |
| 供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT49F001AN-55JIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
M29W128GL70N6F TRMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
AT49LV002-90JIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
MT46V32M16P-5B:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
CY6264-70SNXCTCypress Semiconductor |
IC SRAM 64KBIT PARALLEL 28SOIC |
|
CAT25160VE-GCSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KB SER SPI 8SOIC |
|
MT47H32M8BP-3:B TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
M28W640FCB70N6F TRMicron Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
AT25128AN-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8SOIC |
|
IDT71V65903S80PFI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
W25Q32FVSSJQ TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
AS4C64M16MD2A-25BCNAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 134FBGA |
|
MT46H64M32LFMA-5 IT:A TRMicron Technology |
IC DRAM 2GBIT PARALLEL 168WFBGA |
