类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR2 |
内存大小: | 1Gb (128M x 8) |
内存接口: | Parallel |
时钟频率: | 333 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 450 ps |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 105°C (TC) |
安装类型: | Surface Mount |
包/箱: | 60-TFBGA |
供应商设备包: | 60-FBGA (8x10) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
709079L12PFIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
71V35761S166BGGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT45W4MW16PFA-70 WTMicron Technology |
IC PSRAM 64MBIT PARALLEL 48VFBGA |
|
N25Q128A13E1241F TRMicron Technology |
IC FLASH 128MBIT SPI 24TPBGA |
|
AT49LV002T-70JIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
CAT25640LI-GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT SPI 20MHZ 8DIP |
|
M29F800DT70N1Micron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
PC28F128P30B85AMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
MT48LC32M4A2P-7E:GMicron Technology |
IC DRAM 128MBIT PAR 54TSOP II |
|
AT24C128N-10SCRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 8SOIC |
|
CY7C1041CV33-8ZSXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MT29F128G08CFCGBWP-10M:GMicron Technology |
IC FLASH 128GBIT PAR 48TSOP I |
|
PC28F128J3D75AMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |