类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 3ms |
访问时间: | 300 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TC) |
安装类型: | Surface Mount |
包/箱: | 32-LCC (J-Lead) |
供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT24C512N-10SU-1.8Roving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIC |
|
AT25020A-10TU-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 20MHZ 8TSSOP |
|
W25Q128FVBIGWinbond Electronics Corporation |
IC FLSH 128MBIT SPI/QUAD 24TFBGA |
|
S25FL132K0XMFIS11Cypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
7027S20PFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
7130SA55PRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 48DIP |
|
W25Q80BLUXIG TRWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 80MHZ 8USON |
|
MT48H4M16LFF4-8Micron Technology |
IC DRAM 64MBIT PARALLEL 54VFBGA |
|
M24C64-WMN6TSTMicroelectronics |
IC EEPROM 64KBIT I2C 1MHZ 8SO |
|
MT46V32M16FN-5B:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
MT48V8M16LFB4-8 IT:GMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
IS61QDB22M18-250M3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
AT49BV8192A-90TIRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 40TSOP |