English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR |
| 内存大小: | 512Mb (16M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 5 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 90-VFBGA |
| 供应商设备包: | 90-VFBGA (10x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
7027L55PFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
AT49LV002-12VCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32VSOP |
|
MT46V128M4P-5B:FMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
AT28HC256F-12SARoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
AS4C128M8D3A-12BANTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
IS61WV5128BLS-25TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
70V659S10DRRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 208PQFP |
|
IS46TR16128B-15HBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
AT45DB321D-CU-SL383Adesto Technologies |
IC FLASH 32MBIT SPI 66MHZ 24CBGA |
|
AT24C04-10TI-2.7Roving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 8TSSOP |
|
IS42VS16100C1-10TIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
AT45DQ321-MHD-YAdesto Technologies |
IC FLASH 32MBIT SPI 104MHZ 8UDFN |
|
M24M01-RMW6TGSTMicroelectronics |
IC EEPROM 1MBIT I2C 1MHZ 8SO |
