类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT28HC256-90TCRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
70V9199L7PFRenesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
AT27BV512-70TCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28TSOP |
|
71321LA25PFIRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
AT24C64N-10SC-2.5Roving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
|
IDT71V3577S80PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS61NLP25672-200B1LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 209LFBGA |
|
AT27C516-70JIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 44PLCC |
|
IS43TR16640BL-125KBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
MT47H64M8CF-25E IT:G TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
AT45D011-XCRoving Networks / Microchip Technology |
IC FLASH 1MBIT SPI 15MHZ 14TSSOP |
|
CY7C038V-15AXCCypress Semiconductor |
IC SRAM 1.152MBIT PAR 100TQFP |
|
IS61VPD51236A-200B3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165PBGA |