English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Synchronous |
| 内存大小: | 1Mb (64K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 9 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS43TR16128C-107MBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
70V9079L6PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
AT49F512-90PIRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32DIP |
|
FT24C128A-USR-BFremont Micro Devices |
IC EEPROM 128KBIT I2C 1MHZ 8SOP |
|
SST25VF020A-25-4E-ZAERoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 25MHZ 8CSP |
|
M24C16-WBN6PSTMicroelectronics |
IC EEPROM 16KBIT I2C 400KHZ 8DIP |
|
AS4C64M16MD1-5BCNTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
IDT71V546S133PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
7006L55PFRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
AT49BV002AT-70TIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
AT49LV002NT-12PCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32DIP |
|
MT53E128M32D2DS-053 AAT:A TRMicron Technology |
IC LPDDR4 4G 128MX32 200WFBGA |
|
AT93C66-10PIRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8DIP |
