类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-TSSOP (0.465", 11.80mm Width) |
供应商设备包: | 28-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT93C46R-10SI-2.5Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
AT25DQ161-SH-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI 100MHZ 8SOIC |
|
AT29BV020-12JCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
AT28C64B-15SCRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
MT44K16M36RB-093E IT:AMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
M27C1001-70F1STMicroelectronics |
IC EPROM 1MBIT PARALLEL 32CDIP |
|
N25Q128A23BSF40EMicron Technology |
IC FLASH 128MBIT SPI 16SO W |
|
CY62147EV30LL-45B2XATCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
QMP29GL512P11FFI010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
AT45DB641E-CCUN-TAdesto Technologies |
IC FLASH 64MBIT SPI 85MHZ 9UBGA |
|
IS25WP016-JLLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SERIAL 8WSON |
|
CAT24C32TSI-T3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 32KBIT I2C 1MHZ 5TSOP |
|
IDT71V3558S200PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |