类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.1 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-TBGA |
供应商设备包: | 165-TFBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT41K256M8DA-125:K TRMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
AT45DQ321-MHD2B-TAdesto Technologies |
IC FLASH 32MBIT SPI 104MHZ 8UDFN |
|
SST26VF032-80-5I-QAERoving Networks / Microchip Technology |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
IS61LV51216-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
IDT71V67602S133PFI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
R1LV0216BSB-5SI#S0Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
IDT71V3557SA75BQGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
70V07L25PFI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 80TQFP |
|
FM28V020-T28GTRCypress Semiconductor |
IC FRAM 256KBIT PAR 28TSOP I |
|
AT25010AN-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 20MHZ 8SOIC |
|
CY7C199C-20ZXITCypress Semiconductor |
IC SRAM 256KBIT PAR 28TSOP I |
|
N25Q064A13E12D1F TRMicron Technology |
IC FLASH 64MBIT SPI 24TPBGA |
|
MTFC32GAKAENA-4M IT TRMicron Technology |
IC FLASH 256GBIT MMC 100TBGA |