类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ms |
访问时间: | 200 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TC) |
安装类型: | Surface Mount |
包/箱: | 44-CLCC |
供应商设备包: | 44-CLCC (16.55x16.55) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53B2DBDS-DC TRMicron Technology |
IC DRAM 6GBIT 200WFBGA |
|
MT48LC32M16A2TG-75 IT:C TRMicron Technology |
IC DRAM 512MBIT PAR 54TSOP II |
|
W631GU6KB-12 TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96WBGA |
|
IS46TR16128A-15HBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
MT40A4G4DVN-075H:E TRMicron Technology |
IC DRAM 16GBIT FLASH 78FBGA |
|
MT46V64M4P-6T:KMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
MX29GL512FUXFI-12GMacronix |
IC FLSH 512MBIT PARALLEL 64LFBGA |
|
MT29F1HT08EMCBBJ4-37:BMicron Technology |
IC FLASH 1.5T PARALLEL 132VBGA |
|
BR93L66-WROHM Semiconductor |
IC EEPROM 4KBIT SPI 2MHZ 8DIP |
|
AT45DB011-XCRoving Networks / Microchip Technology |
IC FLASH 1MBIT SPI 15MHZ 14TSSOP |
|
70V9359L9PF8Renesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
IS46TR16640BL-125JBLA25-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
AT24C32AN-10SI-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIC |