类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EPROM |
技术: | EPROM - OTP |
内存大小: | 1Mb (64K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 55 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 44-LCC (J-Lead) |
供应商设备包: | 44-PLCC (16.6x16.6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT28BV16-30SCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 24SOIC |
|
AT29LV020-10JIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
SST39VF400A-70-4I-M1QE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48WFBGA |
|
MT40A512M16JY-075E IT:B TRMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
AS4C8M16S-7TCNAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 54TSOP II |
|
IS46TR16640A-125JBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
W632GG8KB15IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78WBGA |
|
IDT71V2548S150BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
7007S20PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 80TQFP |
|
IS42SM16160D-7BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
MT29F128G08CECABH1-12IT:AMicron Technology |
IC FLASH 128GBIT PAR 100VBGA |
|
IS46TR16640B-125KBLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
24LC128-E/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8SOIC |