类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8, 64 x 16) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 10ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TC) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M95160-RMN6PSTMicroelectronics |
IC EEPROM 16KBIT SPI 10MHZ 8SO |
|
IDT71V416VS10BEIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
709159L7PF8Renesas Electronics America |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
CY7C185-15VITCypress Semiconductor |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
RC28F128P30BF65AMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
71342LA20PFRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 64TQFP |
|
IS49NLS18320-25BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
IDT71V3578S150PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS42RM32400G-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
M95080-RMB6TGSTMicroelectronics |
IC EEPROM 8KBIT SPI 8UFDFPN |
|
SST25WF080-75-4I-SAF-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 75MHZ 8SOIC |
|
IS61VPD51236A-200B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165PBGA |
|
IDT71V3557SA75BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |