类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-BSOJ (0.400", 10.16mm Width) |
供应商设备包: | 44-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS4C512M8D3L-12BINAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
MT25QU256ABA8ESF-0SITMicron Technology |
IC FLASH 256MBIT SPI 133MHZ 16SO |
|
IS62WV10248DBLL-55MLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48MINIBGA |
|
AT28C64B-15TIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
M25PX64-VZM6TP TRMicron Technology |
IC FLSH 64MBIT SPI 75MHZ 24TPBGA |
|
STK22C48-NF25ICypress Semiconductor |
IC NVSRAM 16KBIT PARALLEL 28SOIC |
|
S34ML04G200BHV003SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 63BGA |
|
M25P40-VMP6TGB0A TRMicron Technology |
IC FLASH 4MBIT SPI 75MHZ 8VDFPN |
|
DS1245WP-150Maxim Integrated |
IC NVSRAM 1MBIT PAR 34PWRCAP |
|
AS4C32M16D2-25BINAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 84TFBGA |
|
MT29F256G08CECCBH6-6C:CMicron Technology |
IC FLASH 256GBIT PAR 152VBGA |
|
MT46V256M4TG-75:A TRMicron Technology |
IC DRAM 1GBIT PARALLEL 66TSOP |
|
AT27C4096-90PIRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 40DIP |