English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 128Mb (8M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1034DV33-10BGXITCypress Semiconductor |
IC SRAM 6MBIT PARALLEL 119PBGA |
|
AT93C46-10PI-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
DS28E01P-W0R+1TMaxim Integrated |
IC EEPROM 1KBIT 1-WIRE 6TSOC |
|
AT28C16-20SIRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 24SOIC |
|
MT46V128M4P-5B:JMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
IDT70V7319S166DDRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 144TQFP |
|
MT28F400B5SG-8 BMicron Technology |
IC FLASH 4MBIT PARALLEL 44SOP |
|
CY7C1320BV18-167BZCTCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
N01L83W2AN5ISanyo Semiconductor/ON Semiconductor |
IC SRAM 1MBIT PARALLEL 32STSOP I |
|
NAND128W3A2BNXEMicron Technology |
IC FLASH 128MBIT PARALLEL 48TSOP |
|
MT47H64M8CB-5E:BMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IDT71T75602S100PFRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IDT71V65802S133PF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
