English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR |
| 内存大小: | 256Mb (16M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 167 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 700 ps |
| 电压 - 电源: | 2.3V ~ 2.7V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 66-TSSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 66-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT25160B-XHLHX-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
IS46TR16640BL-125JBLA25ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
AT49BV002ANT-70JIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
70V06L55PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
R1RP0408DGE-2LR#B0Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
CY7C1512UV18-267BZICypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AT49BV002N-90TCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
MT46H16M16LFBF-6 AT:H TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60VFBGA |
|
MT29F256G08CKCABH2-12Z:A TRMicron Technology |
IC FLASH 256GBIT PAR 100TBGA |
|
IDT6116LA45SOGI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 24SOIC |
|
THGBMHG9C4LBAIRToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 512GBIT EMMC 153WFBGA |
|
MT46V64M8BN-6:FMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
JS28F00AP30BFAMicron Technology |
IC FLASH 1GBIT PARALLEL 56TSOP |
