English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 64Kb (8K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 1ms |
| 访问时间: | 200 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 28-TSSOP (0.465", 11.80mm Width) |
| 供应商设备包: | 28-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S99FL208K0RMFI041Cypress Semiconductor |
IC FLASH 8MBIT SPI 76MHZ 8SOIC |
|
IS61C6416AL-12KIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
IS61NVP51236-200B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
IDT71V2546S133PFI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AT28HC256F-12JIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
MT48H8M32LFB5-75 IT:H TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
MT29F128G08CBCEBJ4-37:EMicron Technology |
IC FLASH 128GBIT PAR 132VBGA |
|
IS42S32200E-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
23LCV1024T-E/SNRoving Networks / Microchip Technology |
IC SRAM 1MBIT SPI/DUAL I/O 8SOIC |
|
W25Q64JVDAIQ TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8DIP |
|
SST49LF016C-33-4C-WHERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 32TSOP |
|
MT49H32M18SJ-25:B TRMicron Technology |
IC DRAM 576MBIT PARALLEL 144FBGA |
|
AT24C11-10TI-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8TSSOP |
