English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | GL-N |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 32Mb (4M x 8, 2M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 90ns |
| 访问时间: | 90 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-LBGA |
| 供应商设备包: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT71V3576YS150PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT47H128M8B7-37E:AMicron Technology |
IC DRAM 1GBIT PARALLEL 92FBGA |
|
IDT71V65602S133BG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
M95020-WMN6TSTMicroelectronics |
IC EEPROM 2KBIT SPI 20MHZ 8SO |
|
AK6440AMAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 4KBIT SPI 1MHZ 8SSOP |
|
MT29C2G24MAAAAKAMD-5 IT TRMicron Technology |
IC FLASH RAM 2GBIT PAR 130VFBGA |
|
AT93C46-10SIRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
N25W128A11EF740EMicron Technology |
IC FLASH 128MBIT SPI 8VDFPN |
|
IS61LPS25672A-250B1-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 209LFBGA |
|
M24256-BHRMN6TPSTMicroelectronics |
IC EEPROM 256KBIT I2C 1MHZ 8SO |
|
AT27C2048-90JIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 44PLCC |
|
AT49LV001-12TIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
IS41LV16105C-50KLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 42SOJ |
