类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Discontinued at Digi-Key |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 256Mb (32M x 8) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT49BV8192A-90TCRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
CY7C1021CV33-12VXCCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
AT49F001T-55JCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
M24C04-WMN6TSTMicroelectronics |
IC EEPROM 4KBIT I2C 400KHZ 8SO |
|
IDT71V3557SA85BGG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
M25PE40S-VMW6TG TRMicron Technology |
IC FLASH 4MBIT SPI 75MHZ 8SO W |
|
IS46LD32320A-25BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 134TFBGA |
|
IS42S16100C1-7TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
IS49NLS93200-25BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144FCBGA |
|
RMLV1616AGSD-5S2#AA1Renesas Electronics America |
IC SRAM 16MBIT PAR 52TSOP II |
|
R1LP0108ESN-5SR#S0Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOP |
|
S34ML01G100TFI503SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 48TSOP I |
|
AT25010AN-10SU-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 20MHZ 8SOIC |