类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 2.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS42S32160B-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 86TSOP II |
|
S29GL064N90FAI020Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
7133SA35PF8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 100TQFP |
|
MT48V8M16LFB4-8 XT:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
IDT71V416VL12BEI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
AS4C256M16D3A-12BANTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
IS42S16100E-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
AT27C010L-90TCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32TSOP |
|
MT29F2G08ABAEAWP-ITX:EMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
IS46TR16640CL-107MBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
AT25320A-10PI-1.8Roving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 20MHZ 8DIP |
|
IS61VF51236A-6.5B3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
MT47H128M8CF-25E IT:HMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |