English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EPROM |
| 技术: | EPROM - OTP |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 120 ns |
| 电压 - 电源: | 2.7V ~ 3.6V, 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LCC (J-Lead) |
| 供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS42SM16800G-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
IS61NLP25618A-200TQIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
M48Z35Y-70MH1ESTMicroelectronics |
IC NVSRAM 256KBIT PARALLEL 28SOH |
|
IDT71V3556S133PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
DS1225AD-200Maxim Integrated |
IC NVSRAM 64KBIT PARALLEL 28EDIP |
|
MT40A256M16GE-062E IT:BMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
FT25H16S-RTFremont Micro Devices |
IC FLASH 16MBIT SPI 120MHZ 8SOP |
|
AT29LV512-12TIRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32TSOP |
|
IS29GL01GS-11TFV023Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
M29DW323DB70N6F TRMicron Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
AT25640N-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 3MHZ 8SOIC |
|
7015L25PF8Renesas Electronics America |
IC SRAM 72KBIT PARALLEL 80TQFP |
|
IS64LV51216-12TLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |
