English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR |
| 内存大小: | 512Mb (64M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 700 ps |
| 电压 - 电源: | 2.5V ~ 2.7V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 66-TSSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 66-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS65WV25616DBLL-55CTLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
AT93C46A-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
7006L20PFIRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
IDT71V416VS12PHRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IS42S16160B-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
IDT71V546XS133PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS42S16160B-7TIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
70V27L20PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
W25Q16FWBYIG TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8WLCSP |
|
25LC040A-E/ST16KVAORoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8TSSOP |
|
CY7C0832V-167AXCCypress Semiconductor |
IC SRAM 4.5MBIT PARALLEL 120TQFP |
|
NM93C46M8XSanyo Semiconductor/ON Semiconductor |
IC EEPROM 1KBIT SPI 1MHZ 8SO |
|
AT25160N-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
