English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | DRAM |
| 内存大小: | 288Mb (8M x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 300 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 144-TFBGA |
| 供应商设备包: | 144-FCBGA (11x18.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT45DB021D-MH-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 66MHZ 8UDFN |
|
CY62137VLL-70ZSXECypress Semiconductor |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
CY7C1444AV33-167AXCTCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
W632GU8MB-09Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
AT25160AN-10SU-1.8Roving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 20MHZ 8SOIC |
|
70V5388S133BG8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 272PBGA |
|
SST49LF016C-33-4C-NHE-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 32PLCC |
|
IS61VPD102418A-250B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165PBGA |
|
IDT71V416S15PHI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MT28F008B3VG-9 TMicron Technology |
IC FLASH 8MBIT PARALLEL 40TSOP I |
|
IS42S32160C-6BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90WBGA |
|
IS43TR16512AL-125KBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96LFBGA |
|
S29JL032J60TFI410Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 48TSOP |
