English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 2Gb (256M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 30ns |
| 访问时间: | 30 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 48-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
7024L20JRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
7027L20PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
NM27C256V90Sanyo Semiconductor/ON Semiconductor |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
AT28C010-20SIRoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32SOIC |
|
IDT71V3577S85PFI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS42SM32400G-75BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
IS29GL256S-10TFV023Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
70V27L35PFIRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
MT49H16M36SJ-18:BMicron Technology |
IC DRAM 576MBIT PARALLEL 144FBGA |
|
AT27BV010-90JIRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
AT24C01AY1-10YI-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8MAP |
|
IS45VM16800H-75BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
AT27C040-15TIRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32TSOP |
