类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 2Mb (256K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 36-BSOJ (0.400", 10.16mm Width) |
供应商设备包: | 36-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT45DB081B-CNIRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 20MHZ 8CASON |
|
IS29GL256S-10DHB01Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
MT48LC16M16A2F4-6A:GAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 54VFBGA |
|
MT48LC4M16A2P-75:GMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
IDT71P72804S250BQG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
CY62138FV30LL-45ZSXITCypress Semiconductor |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
PC28F128P30BF65EMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
CY7C1370D-250AXCTCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IDT71V25761SA166BQI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AT24C1024Y4-10YU-2.7Roving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8SAP |
|
NM93CS66ENSanyo Semiconductor/ON Semiconductor |
IC EEPROM 4KBIT SPI 1MHZ 8DIP |
|
IS42S16800E-75EBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
AT25DQ321-MH-TAdesto Technologies |
IC FLASH 32MBIT SPI 100MHZ 8UDFN |