类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 1Gb (64M x 16) |
内存接口: | Parallel |
时钟频率: | 933 MHz |
写周期时间 - 字,页: | - |
访问时间: | 20 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-FBGA (8x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q32BVTBJPWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 24TFBGA |
|
S29GL032N90TFBR40Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
JS28F640J3F75B TRMicron Technology |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
S25FL164K0XMFIS10Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
W631GU6KB12I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96WBGA |
|
CY7C1019DV33-10ZSXIRochester Electronics |
STANDARD SRAM, 128KX8, 10NS, CMO |
|
MT48H16M32L2F5-8Micron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
MT53B384M32D2DS-062 AAT:B TRMicron Technology |
IC DRAM 12GBIT 1600MHZ 200WFBGA |
|
IDT71V65802S133PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS25LD020-JNLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 2MBIT SPI 100MHZ 8SOIC |
|
M29F400BT55N1Micron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
AT27C080-90RCRoving Networks / Microchip Technology |
IC EPROM 8MBIT PARALLEL 32SOIC |
|
MT46V32M16BN-6:CMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |