类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-TBGA |
供应商设备包: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
AS4C64M16D3L-12BANTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 96FBGA |
![]() |
S29GL256P11FFIS40Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
![]() |
MT46H8M32LFB5-6 IT:HMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
![]() |
7014S12J8Renesas Electronics America |
IC SRAM 36KBIT PARALLEL 52PLCC |
![]() |
AT24C32D-MAPD-ERoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 1MHZ 8UDFN |
![]() |
S34MS01G200TFA003SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 48TSOP I |
![]() |
MT41K1G8SN-107:AMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
![]() |
N25Q128A13B1240F TRMicron Technology |
IC FLASH 128MBIT SPI 24TPBGA |
![]() |
IDT71V3559SA85BQGRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
![]() |
MT48LC2M32B2P-5:J TRMicron Technology |
IC DRAM 64MBIT PAR 86TSOP II |
![]() |
NM24C03ENSanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT I2C 100KHZ 8DIP |
![]() |
W632GU6MB-12 TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
![]() |
IDT71V016HSA12PH8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |