English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 4.5Mb (128K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.1 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 119-BBGA |
| 供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT40A512M16JY-083E IT:B TRMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
MT48LC16M16A2TG-6A:D TRMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
S34ML04G200TFI000SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 48TSOP I |
|
W29GL256SL9T TRWinbond Electronics Corporation |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
STK14CA8-RF35ITRCypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 48SSOP |
|
DS1265W-100Maxim Integrated |
IC NVSRAM 8MBIT PARALLEL 36EDIP |
|
IS43DR82560B-25EBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 60TWBGA |
|
709089S12PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
MT48LC4M32B2P-6A IT:LMicron Technology |
IC DRAM 128MBIT PAR 86TSOP II |
|
MT44K32M18RB-093E:A TRMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
AT25256-10PIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 3MHZ 8DIP |
|
AT29C040A-90PCRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32DIP |
|
RC28F640P30BF65B TRMicron Technology |
IC FLASH 64MBIT PAR 64EASYBGA |
