English
简体中文
XTAL OSC VCXO 614.4000MHZ HCSL
SWITCH TOGGLE DPDT 0.4VA 20V
CONN SOCKET 41P 0.05 GOLD SMD RA
IC DRAM 4GBIT PARALLEL 134FBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR2 |
| 内存大小: | 4Gb (128M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 400 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.14V ~ 1.3V |
| 工作温度: | -25°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 134-VFBGA |
| 供应商设备包: | 134-FBGA (11x11.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT48LC32M8A2P-75 IT:DMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
IS43TR16128AL-125KBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
MT44K16M36RB-093 IT:A TRMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
AT28C17E-15SCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 28SOIC |
|
70V3579S5DRRenesas Electronics America |
IC SRAM 1.125MBIT PAR 208PQFP |
|
MT46V64M8BN-75:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
70V06L20PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
IS61VPS102418A-250B3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
AT24C08A-10PC-2.7Roving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8DIP |
|
M25P16-VMN3YPBMicron Technology |
IC FLASH 16MBIT SPI 75MHZ 8SO |
|
S34ML08G201BHA003SkyHigh Memory Limited |
IC FLASH 8G PARALLEL |
|
S25FL129P0XMFI003Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
CAT93C57LI-GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT SPI 1MHZ 8DIP |