类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 700 ps |
电压 - 电源: | 2.5V ~ 2.7V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 66-TSSOP (0.400", 10.16mm Width) |
供应商设备包: | 66-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
MT47H32M16HR-25E IT:GMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
![]() |
S25FL116K0XMFV010Cypress Semiconductor |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
![]() |
MT29C1G12MAACAEAMD-6 IT TRMicron Technology |
IC FLASH RAM 1GBIT PAR 130VFBGA |
![]() |
PF48F3000P0ZTQ0AMicron Technology |
IC FLASH 128MBIT PARALLEL 88SCSP |
![]() |
AS4C128M8D3L-12BANAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 78FBGA |
![]() |
IDT71V3556S100PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
![]() |
N25Q256A83ESF40F TRMicron Technology |
IC FLASH 256MBIT SPI 16SOP2 |
![]() |
W29GL128PH9TWinbond Electronics Corporation |
IC FLASH 128MBIT PARALLEL 56TSOP |
![]() |
IDT71V3577YS75PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
![]() |
EDY4016AABG-JD-F-R TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
![]() |
70V34L15PFRenesas Electronics America |
IC SRAM 72KBIT PARALLEL 100TQFP |
![]() |
AS4C512M8D3LB-10BINTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
![]() |
AT28HC64B-12SCRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |