English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 8Mb (1M x 8, 512K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 90ns |
| 访问时间: | 90 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 48-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT70824L35PFRenesas Electronics America |
IC RAM 64KBIT PARALLEL 80TQFP |
|
MT48LC4M16A2P-6A AIT:JMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
AT24C02-10TI-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
M27C512-12B1STMicroelectronics |
IC EPROM 512KBIT PARALLEL 28DIP |
|
NP5Q064AE3ESFC0EMicron Technology |
IC PCM 64MBIT SPI 66MHZ 16SO W |
|
IS43TR16256AL-107MBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
M48Z58Y-70MH1ESTMicroelectronics |
IC NVSRAM 64KBIT PARALLEL 28SOH |
|
IS63LV1024-8KL-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
7025S35PFRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
25LC040A-H/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8SOIC |
|
AT28LV256-20JCRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
DS1230ABP-70INDMaxim Integrated |
IC NVSRAM 256KBIT PAR 34PWRCAP |
|
MT29F256G08CMCBBH2-10IT:B TRMicron Technology |
IC FLASH 256GBIT PAR 100TBGA |
