类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 512Kb (64K x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 10ms |
访问时间: | 900 ns |
电压 - 电源: | 2.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NMC27C64N150Sanyo Semiconductor/ON Semiconductor |
IC EPROM 64KBIT PARALLEL 28DIP |
|
IS49NLC96400-25BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
AT27C512R-12PIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28DIP |
|
FT93C56A-ISR-TFremont Micro Devices |
IC EEPROM 2KBIT SPI 2MHZ 8SOP |
|
CY7C1382D-200AXCTCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
AT93C46A-10SIRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
AS7C316096B-10BINAlliance Memory, Inc. |
IC SRAM 16MBIT PARALLEL 48TFBGA |
|
IS61LF51236A-7.5B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
AT29C512-15PIRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32DIP |
|
AT28C010-20JIRoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32PLCC |
|
AT27LV256A-55TURoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28TSOP |
|
RC28F128J3F95DMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
THGBMHG8C4LBAWRToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 256GBIT EMMC 153WFBGA |