类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 256Mb (16M x 16) |
内存接口: | Parallel |
时钟频率: | 167 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 700 ps |
电压 - 电源: | 2.3V ~ 2.7V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 60-FBGA |
供应商设备包: | 60-FBGA (8x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MX29F200CBMI-70GMacronix |
IC FLASH 2MBIT PARALLEL 44SOP |
|
MT46V128M8TG-6T:AMicron Technology |
IC DRAM 1GBIT PARALLEL 66TSOP |
|
IDT71V25761SA166BGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IDT71V424L12PHIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MT48LC8M16A2P-6A AIT:LMicron Technology |
IC DRAM 128MBIT PAR 54TSOP II |
|
W632GU8KT-12Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
W25Q128FVBJQWinbond Electronics Corporation |
IC FLSH 128MBIT SPI/QUAD 24TFBGA |
|
RC48F4400P0VB0E3Micron Technology |
IC FLASH 512MBIT PAR 64EASYBGA |
|
IDT71V416S10PHRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
7006L17PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
IDT71V3557SA80BGGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
CY7C139-25JXCCypress Semiconductor |
IC SRAM 36KBIT PARALLEL 68PLCC |
|
AT28C64-12PIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28DIP |