English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | GL-S |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 256Mb (32M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 60ns |
| 访问时间: | 100 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT27BV512-15TCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28TSOP |
|
AT24C128B-TH-BRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8TSSOP |
|
AS4C256M8D3-15BCNTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
N25Q128A21BSF40F TRMicron Technology |
IC FLASH 128MBIT SPI 16SO W |
|
IS43QR16256A-083RBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
R1LV1616RBG-5SI#B0Renesas Electronics America |
IC SRAM 16MBIT PARALLEL 48FBGA |
|
IDT71V2558S100PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IDT71P71604S250BQRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
S34MS02G104BHB010SkyHigh Memory Limited |
IC FLASH 2G PARALLEL 63BGA |
|
MT29F256G08EFEBBWP-M:B TRMicron Technology |
IC FLASH 256GBIT PAR 48TSOP I |
|
CY7C1414AV18-167BZICypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
7130LA20PF8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
S29GL128P11FFI013Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
