类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 28-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71256SA20YIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
MT25QU128ABA8E12-0SITMicron Technology |
IC FLASH 128MBIT SPI 24TBGA |
|
RC28F256M29EWHAMicron Technology |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
M93C56-MN6TSTMicroelectronics |
IC EEPROM 2KBIT SPI 2MHZ 8SO |
|
AT25320AY1-10YI-2.7Roving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 20MHZ 8MAP |
|
IS42S32160C-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90WBGA |
|
MT46V32M16BN-5B:FMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IS49NLC36160-25EBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
IDT71V35761S183BQGI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
CY7C199C-15VXCCypress Semiconductor |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
S25FL032P0XMFV011MCypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
CAT28C256H13I12Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT PAR 28TSOP |
|
AT27C512R-15RCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28SOIC |