类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM |
内存大小: | 16Mb (2M x 8, 1M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 52-TFSOP (0.350", 8.89mm Width) |
供应商设备包: | 52-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT25HP512-10CI-1.8Roving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 10MHZ 8LAP |
|
CY7C1062DV33-10BGITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 119PBGA |
|
MT48LC2M32B2TG-7 IT:G TRMicron Technology |
IC DRAM 64MBIT PAR 86TSOP II |
|
MT48V4M32LFB5-8 IT:GMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
25C040XT/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8TSSOP |
|
MT48LC4M32B2P-6:G TRMicron Technology |
IC DRAM 128MBIT PAR 86TSOP II |
|
IS41LV16105B-60KLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 42SOJ |
|
S29CD032J0RFAM010Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 80FBGA |
|
AT45DB041A-RC-2.5Roving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 10MHZ 28SOIC |
|
W25Q40BWZPIG TRWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 80MHZ 8WSON |
|
W25Q128JVCJM TRWinbond Electronics Corporation |
IC FLSH 128MBIT SPI/QUAD 24TFBGA |
|
AK6512CMAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 64KBIT SPI 5MHZ 8SSOP |
|
MT29F2G08AADWP:D TRMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |