English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 256Mb (32M x 8, 16M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 70ns |
| 访问时间: | 70 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-LBGA |
| 供应商设备包: | 64-FBGA (11x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT71V25761YSA183BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
MT48LC64M8A2TG-75 IT:CMicron Technology |
IC DRAM 512MBIT PAR 54TSOP II |
|
CAT28F010HR12Sanyo Semiconductor/ON Semiconductor |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
NAND08GW3F2AN6EMicron Technology |
IC FLASH 8GBIT PARALLEL 48TSOP |
|
S29GL064N11FFIV22Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
IS46LD32320A-3BPLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 168VFBGA |
|
X28HC256JIZ-12Intersil (Renesas Electronics America) |
IC EEPROM 256KBIT PAR 32PLCC |
|
CY7C1062AV33-10BGCCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 119PBGA |
|
7024L17JRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
IDT71256SA20TPIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28DIP |
|
IS45S32400E-6BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
24AA16-I/MC16KVAORoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 100KHZ 8DFN |
|
AT27LV040A-12JCRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32PLCC |
