类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 8Mb (1M x 8, 512K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 30µs |
访问时间: | 110 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CAT28C16AWI12Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT PARALLEL 24SOIC |
|
IS61NLF102436A-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 100LQFP |
|
AT93C57-10PCRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DIP |
|
MT46V32M16BN-75:CMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
N25Q00AA11G1240EMicron Technology |
IC FLSH 1GBIT SPI 108MHZ 24LPBGA |
|
M25PX80-VMN6TPZ1 TRMicron Technology |
IC FLASH 8MBIT SPI 75MHZ 8SO |
|
AS4C512M8D3LB-12BCNAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
MX66U1G89GXDQD0Macronix |
IC FLASH 1GBIT SPI/QUAD 24BGA |
|
R1LV0108ESN-5SI#B0Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOP |
|
M24128-BWDW6TSTMicroelectronics |
IC EEPROM 128KBIT I2C 8TSSOP |
|
W25Q32FWZPIQWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
MT25QU128ABA8E14-1SITMicron Technology |
IC FLASH 128MBIT SPI 24TPBGA |
|
HM216514TTI5SEZRenesas Electronics America |
IC SRAM 8MBIT PARALLEL 44TSOP II |