English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 50µs |
| 访问时间: | 120 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Through Hole |
| 包/箱: | 32-DIP (0.600", 15.24mm) |
| 供应商设备包: | 32-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT71V124SA12YRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
70V9079L6PFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
DS2502P/T&RMaxim Integrated |
IC EPROM 1KBIT 1-WIRE 6TSOC |
|
GD25VE16CSIGGigaDevice |
IC FLASH 16MBIT SPI/QUAD 8SOP |
|
AT25DF021-MHF-YRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 50MHZ 8UDFN |
|
W632GG6MB12JWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
MT29F1G08ABCHC:CMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
AT24C08-10TI-1.8Roving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 8TSSOP |
|
DS2016-100Maxim Integrated |
IC SRAM 16KBIT PARALLEL 24DIP |
|
IS42VM16400K-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
W632GU6MB11IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
W25Q128FWPIQ TRWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
70V24L15J8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
