English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-BSSOP (0.295", 7.50mm Width) |
| 供应商设备包: | 48-SSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT48H4M16LFB4-8:H TRMicron Technology |
IC DRAM 64MBIT PARALLEL 54VFBGA |
|
IDT71V2548S100BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
AT27C512R-15RARoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
IS63LV1024L-12JL-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
MT41J128M16HA-125 IT:DMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
AT25640-10PI-2.7Roving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 3MHZ 8DIP |
|
W948D6FBHX6E TRWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 60VFBGA |
|
IDT6116LA20TPRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24DIP |
|
PC28F512P30TF0Micron Technology |
IC FLASH 512MBIT PAR 64EASYBGA |
|
AT49F512-70VURoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32VSOP |
|
M25P10-AVMN3P/YMicron Technology |
IC FLASH 1MBIT SPI 50MHZ 8SO |
|
CYD09S36V18-200BBXCCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 256FBGA |
|
AS4C256M8D3L-12BANTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 78FBGA |
