English
简体中文
CAP CER 0.47PF 63V C0G/NP0 0603
CAP CER 1111
IC FLASH 512MBIT PARALLEL 64LBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 512Mb (64M x 8, 32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 60ns |
| 访问时间: | 95 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-LBGA |
| 供应商设备包: | 64-LBGA (11x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT41K256M16TW-107:PMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
S29GL064S90TFI013Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
CY7C0831V-167AXCCypress Semiconductor |
IC SRAM 2MBIT PARALLEL 120TQFP |
|
MX29LV400CBXEI-90GMacronix |
IC FLASH 4MBIT PARALLEL 48LFBGA |
|
IS42S32800B-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
AT24C128BN-SH-BRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 8SOIC |
|
S25FL129P0XMFV013Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
NM27C512V120Sanyo Semiconductor/ON Semiconductor |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
MSM5117405F-60J3-7ROHM Semiconductor |
IC DRAM 16MBIT PARALLEL 26SOJ |
|
IDT71016S12YRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
SST25WF010-40-5I-QAFRoving Networks / Microchip Technology |
IC FLASH 1MBIT SPI 40MHZ 8WSON |
|
CY7C1474BV25-200BGCTCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 209FBGA |
|
70V35L25PFRenesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |