类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 32Kb (4K x 8) |
内存接口: | SPI |
时钟频率: | 20 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M58LW032D90ZA6STMicroelectronics |
IC FLASH 32MBIT PARALLEL 64TBGA |
|
MT41K256M16RE-15E IT:DMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
MT40A1G8WE-075E:B TRMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
70V26S55J8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
|
AT27C512R-55RIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28SOIC |
|
S29GL256P11TFI020DCypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
IDT71V424L10PHRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
70V9389L7PRF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 128TQFP |
|
GD5F1GQ4RF9IGYGigaDevice |
IC FLASH 1GBIT SPI/QUAD I/O 8LGA |
|
IS42S16100C1-6TISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
AT21CS01-STUM12-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 125KHZ SOT23 |
|
PC28F320J3D75D TRMicron Technology |
IC FLASH 32MBIT PAR 64EASYBGA |
|
AT49BV002AN-70VURoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32VSOP |