类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 2.25Mb (128K x 18) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 3.15V ~ 3.45V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 128-LQFP |
供应商设备包: | 128-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT25256-10PI-1.8Roving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 8DIP |
|
AT27LV256A-15JIRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
IS46TR16640B-125KBLA3ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
IS29GL01GS-11DHV01Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
MT53B256M32D1NP-062 WT:C TRMicron Technology |
IC DRAM 8GBIT 1600MHZ 200WFBGA |
|
IS43TR81280B-15GBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 78TWBGA |
|
IS61VPS51236A-250B3L-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
IS29GL01GS-11DHB020Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
7134SA25JRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
IS43TR16640B-093NBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
AT25320W-10SCRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 3MHZ 8SOIC |
|
IS25WP032-JBLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
W25Q256FVFIG TRWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 16SOIC |